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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N06PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
NP82N06PDG-E1-AY
NP82N06PDG-E2-AY
Note
Note
Pure Sn (Tin)
Tape
800 p/reel
TO-263 (MP-25ZP)
typ. 1.5 g
Note See “ TAPE INFORMATION ”
FEATURES
? Super low on-state resistance
R DS(on)1 = 6.7 m Ω MAX. (V GS = 10 V, I D = 41 A)
R DS(on)2 = 8.5 m Ω MAX. (V GS = 5 V, I D = 41 A)
? Low C iss
C iss = 5700 pF TYP.
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C)
(TO-263)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
V DSS
V GSS
I D(DC)
60
± 20
± 82
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
± 270
A
Total Power Dissipation (T C = 25 ° C)
Total Power Dissipation (T A = 25 ° C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
143
1.8
175
? 55 to +175
W
W
° C
° C
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note2
Note2
I AR
E AR
37
137
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. T ch ≤ 150°C, V DD = 30 V, R G = 25 Ω , V GS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
1.05
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18227EJ1V0DS00 (1st edition)
Date Published June 2006 NS CP(K)
Printed in Japan
2006
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相关代理商/技术参数
NP82N06PDG-E2-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET
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NP82N06PLG-E1-AY 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
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